In Snapdragon (Mobile, Wear) in version MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016, a double free of ASN1 heap memory used for EUTRA CAP container occurs during UTRAN to LTE Capability inquiry procedure.
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