CVE detail

CVE-2020-10255 — CVE-2020-10255

Published 2020-03-10 · Modified 2026-06-17 · Vendor micron · Product ddr4_sdram · Source nvd
CRITICAL
severity
CVSS-derived band
9.0
CVSS v3
0–10 scale
0.0258
EPSS probability
exploitation probability, 30d
84.0%
EPSS percentile
percentile vs all CVEs
NOT LISTED
CISA KEV
known exploited catalog

Description

Modern DRAM chips (DDR4 and LPDDR4 after 2015) are affected by a vulnerability in deployment of internal mitigations against RowHammer attacks known as Target Row Refresh (TRR), aka the TRRespass issue. To exploit this vulnerability, the attacker needs to create certain access patterns to trigger bit flips on affected memory modules, aka a Many-sided RowHammer attack. This means that, even when chips advertised as RowHammer-free are used, attackers may still be able to conduct privilege-escalation attacks against the kernel, conduct privilege-escalation attacks against the Sudo binary, and achieve cross-tenant virtual-machine access by corrupting RSA keys. The issue affects chips produced by SK Hynix, Micron, and Samsung. NOTE: tracking DRAM supply-chain issues is not straightforward becau

Remediation

No vendor-published fix data in our corpus for this CVE. Check the references below or the vendor's PSIRT / security advisories page.

References

cvedb.io · NVD · CISA KEV · FIRST EPSS · vendor advisories (CVE Program List v5). Informational only, no warranty — verify every remediation against the vendor advisory before acting on it. This product uses data from the NVD API but is not endorsed or certified by the NVD, CISA, FIRST.org or any vendor named. CVE® is a registered trademark of The MITRE Corporation.